PRODUCTION ENGINEERING MEASURES. HIGH FREQUENCY TRANSISTOR
Abstract
Work was continued towards the production of a 1000 mc germanium transistor. Engineering effort was devoted to the following areas: (1) developing improvements in epitaxial substrate material; (2) development of techniques to diffuse the epitaxial material; (3) continued development of the evaporation and alloying process; (4) continued development of assembly processes; and (5) development of several test fixtures for high frequency measurements. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 20, 1962
- Accession Number
- AD0276406
Entities
People
- T.g. Stoudt