DETERMINATION OF ELECTRONIC PROPERTIES OF SEMICONDUCTING MATERIALS
Abstract
Values of surface potentials for etched and oxidized surfaces p- and n-type Si crystals were obtained from the measurements of surface photovoltage and photoconductivity. The p-type samples had resistivities ranging from 1 to 3400 ohm-cm and those of n-type from 1.1 to 1100 ohmcm. Surface potentials on etched and oxidized n-and p-type Si crystals were as high as 1 v and, except for n-type etched crystals, appeared to increase (in absolute value) with increasing resistivity. The surface potential of both pand n-types decreased by about 21 kT/e after oxidation. Surface photovoltage values of 1.2 kT/e for 520 ohm-cm silicon and -0.9 for 46 ohm-cm silicon were obtained. These may be compared with values of 0.14 ev obtained. The oxidized surfaces prepared were stable over several weeks. However, indications are that after several months the high surface voltages deteriorate to values more in line with theoretical values. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1961
- Accession Number
- AD0276744
Entities
People
- I.m. Naqvi
- Jurij Maczuk
- R.m. Showers
Organizations
- University of Pennsylvania