OXIDE NUCLEATION AND GROWTH

Abstract

Although the interaction of O with a clean metal surface is usually interpreted in terms of homogeneous chemisorption, careful kinetic measurements of the very initial takeup of O by a clean Mg surface indicate that the first stage of the process is dominated by nucleation and growth of the oxide phase at certain preferred sites on the metal surface. This interpretation is supported by the observed structure of the oxide film. The Wagener flow method was used to study the kinetics of oxide film formation at very low oxygen pressures from 77 to 304 K. The structures of the metal surface and oxide film were studied by electron microscopy and electron diffraction. During the first stage of oxidation the sticking probability S increased with takeup of oxygen. Once the oxide islands had grown together the sticking probability decreased as the oxide film thickened. During both stages of the oxidation process, the sticking probability was independent of the oxygen pressure. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1962
Accession Number
AD0277904

Entities

People

  • William Harold Orr

Organizations

  • Cornell University

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Diffraction
  • Electron Diffraction
  • Electron Microscopy
  • Electrons
  • Films
  • Measurement
  • Microscopy
  • Nucleation
  • Oxidation
  • Oxide Films
  • Oxides
  • Probability

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene