MAXIMIZING THE PERFORMANCE OF PHOTOCONDUCTORS

Abstract

A simple analysis of the limitations on photoconductivity performance of a sensitive photoconductor like CdS indicates that ultimate likely success in materials control and development will not yield a material with response time less than 1/10-second for .0001 ft-c illumination or lower. The initial stages of success in preparing larger crystals of CdS with impoved photocond ctivity performance for low light intensity excitation have been achieved. Large boules of pure CdS and of CdS with controlled impurities, in sizes of 12 mm in diam. and 40 mm long, have been prepared by sublimation or chemical transport with a moving temper t re gradient. The reality of trap densities of the order of 10 to the 19th power 1/cc in annealed gallium arsenide crystals were substantiated and evidence presented relating these traps to crystal defects. Apparatus capable of measuring mobilities in material with conductivity as low as 10 to the -10ure of surface states. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 30, 1962
Accession Number
AD0278050

Entities

People

  • J. Blanc
  • R.h. Bube

Organizations

  • Sarnoff Corporation

Tags

DTIC Thesaurus Topics

  • Conductivity
  • Crystal Defects
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Electrical Properties
  • Electricity
  • Excitation
  • Gallium
  • Gallium Arsenides
  • Illumination
  • Impurities
  • Intensity
  • Materials
  • Mobility
  • Photoconductivity
  • Photoconductors

Readers

  • Materials Science and Engineering.
  • Mathematics or Statistics
  • Software Engineering

Technology Areas

  • Microelectronics