TUNNEL EMISSION AMPLIFIER INVESTIGATION

Abstract

Investigations of the tunnel emission amplifier continued. Various diode and triode structures of tantalum, tantalum oxide, aluminum, and copper were prepared. The use of silicon thin films asA DIELECTRIC SHOWED THAT WITH THIN FILM SILICON, A TRUE DIODE MAY BE FORMED. Capacitance measurements were made on diode structures prepared from tantalum, tantalum oxide, and gold or aluminum. These devices were not sufficiently stable to allow the determination of capacity for very thin films of tantalum oxide. Metallographic studies on these structures did provide evidence which indicated that the true current densities were higher than the calculated values. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 10, 1962
Accession Number
AD0278655

Entities

People

  • L.e. Godycki

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum
  • Amplifiers
  • Capacitance
  • Current Density
  • Elements
  • Emission
  • Films
  • Measurement
  • Metals
  • Tantalum
  • Thin Films

Readers

  • Electronics Engineering
  • Thin Film Deposition Science.