OXIDE SEMICONDUCTOR MATERIALS AND DEVICE RESEARCH

Abstract

The uniformity of the surface of individual rectifying diodes made from cemic rutile as investigated by measuring the forward resistance and the reverse breakdown voltage at different points on a single sample. Significant variations were found. Materials used for plastic encapsulation are described. The use of NH3 and H2S for the reduction of ceramic rutile to form a semiconducting material produced results comparable to those obtained with a mixture of H2 and He. X-ray diffraction patterns of strongly reduced ceramic rutile were made. Only two crystalline phases, corresponding to TiO2 (rutile) and Ti4O7, were observdin the resulting composition which had a stoichiometric composition of TiO1.76. Preiminary experiments on diodes made from ceramic rutile exhibited photo-excitation effects when the rectifying barrier is subjected to high intensity light pulses. The effect is measurable and will be subjected to analysis as more data is gained. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 17, 1962
Accession Number
AD0278671

Entities

People

  • B. Gossick
  • F. English

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorbers (Materials)
  • Advanced Materials
  • Compound Semiconductors
  • Diffraction
  • Electronics
  • Encapsulation
  • Engineered Materials
  • Excitation
  • Intensity
  • Light Pulses
  • Materials
  • Metamaterial Absorbers
  • Metamaterials
  • Semiconductors
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene