SEMICONDUCTOR RESISTIVE ELEMENT

Abstract

Progress is reported on work performed on vapordeposited silicon elements and diffused silicon elements with respect to improvement of ohmic contacts, increased sheet resistivity, and methods of adjustment. The lowest temperature coefficient of resistance seen thus far, approximately ! 150 ppm over the temperature range -55 to +150 C, was exhibited by vapor deposited polycrystalline elements on ceramic substrates. Tentative load-life data are presented to give some indication of resistance stability. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1962
Accession Number
AD0278729

Entities

People

  • Olin B. Cecil
  • Raymond D. Puckett
  • Rodger B. Herrington

Organizations

  • Texas Instruments

Tags

DTIC Thesaurus Topics

  • Coefficients
  • Compound Semiconductors
  • Electronics
  • Metal-Semiconductor Junctions
  • Polycrystals
  • Resistance
  • Semiconductors
  • Solid State Electronics
  • Substrates
  • Temperature Coefficients

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene