RESEARCH ON II-VI COMPOUND SEMICONDUCTORS.

Abstract

Preparation, purification, crystal growth, and measurement of the fundamental bulk properties of CdS, CdSe, ZnTe, and CdS-CdSe mixed crys als are summarized. Large single crystals of CdS, CdSe, and ZnTe were prepared by the ReynoldsGreene sublimation method. CdSe crystals were also prepared by gradient freezing. Methods for preparing test specimens for electrical and optical measurements are presented. Procedures for conducting high-temperature equilibrium studies on CdSe are discusse . Extensive Hall-effect and conductivity measurements between 77 and 500 K were made on miscellaneous crystals. Other measurements included melting points, refractive indexes, elastic, dielectric, piezoelectric and lattice constants. Correlations were obtained between the sign of the polar axis in CdSe and ZnTe and the X-ray determined AB l yer order. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1962
Accession Number
AD0281718

Entities

People

  • J. L. Barrett
  • L. R. Shiozawa

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Critical Temperature
  • Crystal Growth
  • Crystals
  • Glass Transition Temperature
  • Hall Effect
  • High Temperature
  • Isotherms
  • Measurement
  • Melting Point
  • Refractive Index
  • Semiconductors
  • Silicon Carbide
  • Single Crystals
  • Transition Temperature
  • X Rays

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene