HOT CARRIER PHENOMENA IN SEMICONDUCTORS AT MICROWAVE FREQUENCIES.

Abstract

Measurements of recombination in Cu- and Ni- doped Ge, using contact injection, were made and corrected for surface recombination. The data for Ge:Ni at room and dry ice temps. are similar; for Ge:Cu they are different in that lifetime first increases with field, then decreases at the low temp. Throughout this temp. range, the following appear to be established; (1) the electron capture cross section for neutral Ni and neutral Cu decreases rapidly with electron speed; and (2) for Cu(-) it is essentially independent of speed. The difference in speed-dependence of neutral and negatively-charged centers seems attributable to the Coulomb barrier of the latter. Complex conductivities of n-Ge are reported for 3 samples in different orientations and comparable dc resistivites at 78k. For n-InSb at 78k, large negative values of dielectric constant were found. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1962
Accession Number
AD0281736

Entities

People

  • Vernon J. Fowler

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Conductivity
  • Dielectric Permittivity
  • Electron Capture
  • Electronics
  • Electrons
  • Frequency
  • Measurement
  • Microwave Frequency
  • Microwaves
  • Orientation (Direction)
  • Semiconductors
  • Solid State Electronics

Readers

  • Materials Science and Engineering.
  • Mathematics or Statistics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics