SEMICONDUCTOR DIODE PERFORMANCE IN NUCLEAR RADIATION ENVIRONMENTS.
Abstract
Performance characteristics were determined for two types of general purpose diodes, and for five types of microwave diodes, in radiation environments equivalent to at least 1000 hours' exposure to 10 to the 10th neutron/sq cm-sec and 2 times 10 to the 5th Rad/hour. None of the units studied showed satisfactory performance characteristics after this exposure, although the germanium 1N263 point-contact diode was degraded less than others investigated, and still exhibited measurable properties following the exposure. Results, although not conclusive, seem to indicate that energizing the microwave mixers at X-band (9375 Mc) during radiation is helpful in prolonging the life of the units. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1962
- Accession Number
- AD0281796
Entities
People
- Harlan G. Hamre
- Raymond C. Barrell
- William N. Mcelroy
Organizations
- IIT Research Institute