NUCLEAR RADIATION DAMAGE TO TRANSISTORS. VOLUME II. PERMANENT DAMAGE. PART 1. THEORETICAL ASPECTS,

Abstract

A mathematical analysis of neutron damage to transistors is presented. The approach involves statistical considerations of the variation of minority carrier lifetime tau thereby providing a direct calculation of the damage factor K, previously considered an empirical constant. It is thus possible to calculate the change of common-emitter current gain beta and collector leakage current (Ico) due to neutron exposure. Calculations agree reasonably well with experimental observations. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1962
Accession Number
AD0281841

Entities

People

  • M. Gay Payne
  • Martin J. Cooper

Organizations

  • Harry Diamond Laboratories

Tags

DTIC Thesaurus Topics

  • Accumulators
  • Determinants (Mathematics)
  • Mathematical Analysis
  • Mathematics
  • Minority Groups
  • Nuclear Radiation
  • Observation
  • Radiation
  • Transistors

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology
  • Solar Physics
  • Theoretical Analysis.