EFFECT OF LIGHT ON MECHANICAL PROPERTIES OF SEMI-CONDUCTORS.

Abstract

A resume of knowledge concerning the photomechanical effect to mid-1961 is presented. Efforts were exerted towards identification of the effects in other semiconductors. It was found that it occurs in InSb, InSe and InAs. In addition, an effort was made to detect any plastic deformation during bending of Ge and Si plates under illumination. A series of experiments were designed to detect any effect of oxidation upon fracture stress and hardness of Si crystals; none was observed. However, the fracture characteristics were very sensitive to fracture stress. Up to about 200 Kg/sq-mm, the Si plates fractured into several large crystal chunks; above this stress they were pulverized during fracture. Illumination with UV X-ray radiation had no effect upon this phenomenon. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 01, 1962
Accession Number
AD0282103

Entities

People

  • George C. Kuczynski

Organizations

  • University of Notre Dame

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electronics
  • Hardness
  • Identification
  • Illumination
  • Mechanical Properties
  • Oxidation
  • Physical Properties
  • Plastic Deformation
  • Radiation
  • Semiconductors
  • Solid State Electronics
  • X Rays

Readers

  • Materials Science and Engineering.
  • Mechanical Engineering/Mechanics of Materials.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics