APPLIED RESEARCH PROGRAM ON HIGH-TEMPERATURE RADIATION-RESISTANT SOLAR-CELL ARRAY.
Abstract
Effort was made to determine the technology necessary for the application of a high-temperature, radiation-resistant array of solar cells in a configuration suitable to aerospace vehicles. Toward this end, gallium arsenide solar cells are being fabricated for temperature and radiation tests, and experimental studies are being conducted to determine techniques for fabricating modules and arrays. The choice of gallium arsenide solar cells for this program was dictated by the superior high-temperature and radiation-resistance characteristics of gallium arsenide as compared with silicon. These two materials are the only ones which have been extensively developed for solar cell use. The basic properties of silicon and gallium arsenide are shown. It should be noted that gallium arsenide has a larger band gap, higher electron and hole mobility, and a higher atomic mass than silicon. The higher band gap accounts for the better high-temperature performance of gallium arsenide cells. The higher mobilities result in lower internal electrical resistance and the higher mass contributes to a better radiation resistance. Gallium arsenide cells have a potentially higher conversion efficiency, based on theoretical considerations. Because of their earlier development, silicon cells presently have a somewhat higher efficiency. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 15, 1962
- Accession Number
- AD0282219