SUPERCONDUCTIVE EFFECTS IN THIN FILMS

Abstract

Despite new testing circuitry, it proved impossible to obtain the desired data showing the effect, if any, of crystalline anisotropy on the I-V tunneling characteristic. This resulted fromA COMBINATION OF HIGH TEMPERATURE DEPENDENCE OF TUNNELING RESISTANCE LEADING TO VERY HIGH VALUES AT LOW TEMPERATURES AND EFFECTS ATTRIBUTED TO PICKUP ACROSS THE HIGH RESISTANCE THAT RESULTED. Further work with aluminum appears unlikely of success and attention has been turned to the use of single crystal tin. The performance of superconducting tunneling assemblies as detectors at low radio frequencies has been examined both experimentally and analytically. A description is given of the circuit and the manner in which data were taken. Results are presented typical of the two types of behavior obtained, square law and linear. The effect of the presence of radio frequency on the I-V characteristic is analyzed in detail. The analysis is particularized to the case of superconducting tunneling by use of an equivalent circuit formalism. Expressions are obtained giving the rectified current and voltage in terms of the parameters describing the I-V curve of the device. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 15, 1962
Accession Number
AD0282310

Entities

People

  • S. Shapiro

Organizations

  • Arthur D. Little

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Circuits
  • Detectors
  • Equivalent Circuits
  • Frequency
  • High Temperature
  • Low Temperature
  • Quantum Tunneling
  • Radio Frequency
  • Resistance
  • Single Crystals
  • Thin Films
  • Tunneling

Fields of Study

  • Physics

Readers

  • Approximation Theory.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology