RESEARCH ON CDTE
Abstract
Electrical transport and optical properties of CdTe crystals were studied. Electron mobilities up to 50,000 sq cm/volt were measured. Results were interpreted with regard to scattering mechanism on the assumption of a single donor level. Magnetoresistance measurements were initiated and IR reflectance data obtained on some n-type doped samples. The electron effective mass was determined as 0.12 + or - 0.02. Both n-type and p-type CdTe single crystals were prepared from the melt. Hole mobility data were explained by optical-mode scattering with some contribution from impurity and/or acousticalmode scattering. Carrier concentration as a function of temperature is presented for several zone-refined, undoped samples and for impuritydoped samples.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 31, 1962
- Accession Number
- AD0282526
Entities
People
- M.r. Lorenz
- R.e. Halsted
Organizations
- General Electric