INVESTIGATION OF SEMICONDUCTING PROPERTIES OF II-VI COMPOUNDS
Abstract
Using a radioactive tracer technique, it was demonstrated that by firing II-VI compounds in suitable liquid metals, Cu can be effectively extracted from these materials. Energy levels approximately 1 ev below the conduction band edge were found in CdS fired under high sulfur pressures. The presence of these levels appear to fix the Fermi level in semi-insulating CdS, and it has not been found possible to further lower the Fermi level either by very high pressure sulfur firing or the incorporation of the acceptor impurities Cu, Ag or Au. Liquid Cd firing of some high purity CdS samples has yielded a material showing an electron mobility maximum of 11,000 sq. cm/volt sec. Study of the growth habits of CdS on ZnTe showed that an epitaxial deposit of CdS can be obtained only on the (111) Zn faces of ZnTe. Reasons for this finding are discussed in terms of the thermal etch patterns and the bonding characteristics of II-VI compounds. Double injection and negative resistance behavior has been observed in ZnTe-CdS heterojunctions with wide compensated regions between the p and the n parts of the junction. A tentative band model has been proposed for the ZnTe-CdS junctions on the basis of this and other experimental findings. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 28, 1962
- Accession Number
- AD0282527
Entities
People
- H.h. Woodbury
- M. Aven
Organizations
- Air Force Cambridge Research Laboratories