BETA-SILICON CARBIDE AND ITS POTENTIAL FOR DEVICES

Abstract

The first low-nitrogen beta-silicon carbide crystals were grown. Analysis revealed a tenfold decrease in nitrogen contamination compared with crystals grown previously. Electrical measurements of the low-nitrogen crystals (3.4 x 10 to the 17th power atoms/cc showed an order-of-magnitude increase in resistivity to 0.45 ohm-c . Successful crystal growth runs were made in pyrolytic graphite-coated UF-4S graphite crucibles and in purified, high-density graphite crucibles. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 15, 1962
Accession Number
AD0282636

Entities

People

  • F.a. Halden
  • W.e. Nelson

Organizations

  • SRI International

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbides
  • Compound Semiconductors
  • Contamination
  • Crucibles
  • Crystal Growth
  • Crystals
  • Electrical Measurement
  • Elements
  • Graphitic Materials
  • High Density
  • Measurement
  • Nitrogen
  • Silicon
  • Silicon Carbide

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Mathematics or Statistics