RESEARCH AND DEVELOPMENT OF AN OPERATIONAL TRANSISTOR FROM INSB

Abstract

Considerable improvement in purity and perfection of Insb single crystals was achieved. Crystals grown during the latter part of the contract consstently showed an improvement by a factor of 2 in mobility over those grown earlier. Crystal pulling techniques were developed which allowed single crystals of InSb to be grown with dislocation densities of less than 1/100 sq m. Segregation coefficients of a number of impurities are reported. Bsic studies performed include the use of the photomagnetoelectric effect (PME) to study nonequilibrum transport in p-type InSb. The data suggests: that there is some energy dependence of scattering time which cannot be deduced from these measurements; that the small signal approximation may not be valid even for the lowest photon fluxes available; and that background radiation may be the dominant factor in determining diffusion length. The method used to build n-p-n diffused base, alloyed emitter InSb transistors is described in detal. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1962
Accession Number
AD0282987

Entities

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Background Radiation
  • Coefficients
  • Contracts
  • Crystals
  • Diffusion
  • Dislocations
  • Impurities
  • Measurement
  • Mobility
  • Radiation
  • Scattering
  • Single Crystals
  • Transistors

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Theoretical Analysis.