EXPERIMENTAL AND THEORETICAL INVESTIGATION OF THE ELECTRONIC PROPERTIES OF GERMANIUM SEMICONDUCTORS AT HELIUM TEMPERATURES

Abstract

Germanium semiconductors were prepared by transmutation-doping. In thi method, pure Ge or Ge containing a known impurity concentration is irradiated with slow neutrons. Ge70 and Ge7 capture these neutrons and transmute into Ga71AND As75, respectively, in a ratio which depends on the isotopic abundances and capture cross sections. The advantages are: the compensation ratio is accurately known; one can prepare series of samples in which either the compensation ratio is held constant and the impurity concentration varies, or the minority impurity concentration is fixed and the majority impurity concentration is varied, or the majority impurity concentration is fixed and the minority impurity concentration is varied; and the samples are homogeneous. (Author)

Document Details

Document Type
Technical Report
Publication Date
Feb 20, 1962
Accession Number
AD0283261

Entities

People

  • H. Fritzsche

Organizations

  • University of Chicago

Tags

DTIC Thesaurus Topics

  • Compensation
  • Compound Semiconductors
  • Electronics
  • Germanium
  • Impurities
  • Minority Groups
  • Neutrons
  • Semiconductors
  • Solid State Electronics
  • Thermal Neutrons

Readers

  • Analytical Mechanics
  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics