INSULATED GATE FIELD EFFECT SILICON TRIODES
Abstract
IT HAS BEEN OBSERVED EXPERIMENTALLY THAT THERMALLY GROWN SILICON DIOXIDE NOT ONLY PASSIVATES THE SILICON SURFACE, BUT ALSO LEAVES A THIN N-TYPE CONDUCTING SKIN ON THE SURFACE OF INTRINSIC SILICON. A full investigation of this phenomenon is underway. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1962
- Accession Number
- AD0283421
Entities
People
- M.e. Sekely
Organizations
- Sarnoff Corporation