BASIC STUDY INTO THE MECHANISM OF THE MGO-TYPE COLD CATHODE EMISSION
Abstract
Results are presented of an investigation of the fundamental principles of MgO-type cold cathode emission. A working model provides a detailed explanation of the experimentally observed characteristics from such cold cathodes. An analysis of the dc-voltage distribution in an operating MgO diode indicates that the major portion of the applied dc-voltage appears across the barrier layer, rather than across the MgO layer or the vacuum space. The I-V data, as well as the data obtained under constant-current conditions of the effect of temperature on the barrier voltage, support the assumption that Froehlich-type avalanching occurs in the barrier layer. Analysis of admittance characteristics from operating MgO cold cathodes is very useful in understanding certain details of the principle of self-sustained mechanism. It is shown that these data furnish the most direct information about charge transport in the MgO layer. An analysis of the observed electron energy distributions indicates that the source of primary electrons is an assemblage of electrons of high effective temperature T. Some of these electrons are cooled by inelastic collisions with the MgO layer before being observed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 30, 1962
- Accession Number
- AD0283674
Entities
People
- K. Ramanathan
- R. Johannes