RESEARCH INVESTIGATION OF P-I-N ELECTRON JUNCTION DETECTORS
Abstract
The use of p-i-n junction silicon radiation detectors was examined from the point of view of their dosimetric properties. Three different modes of detector op ratio er min o as o encompass a very broad range of dose rates. By choosing the proper mode of operation, dose rates of the order of 0.1 mr/hr to a few hundred r/min can be encompassed. The wavelength dependence for x-radiation ranging in quality from 0.8 mm Al to 14 mm Cu VL h been examined for such detectors when used as current generators. Preliminary studies of secondary-emitting radiators on the wavelength characteristic were made. Response of the detector, when opera ed both as a current generator and a volt ge ource, was compared to extrapolation chamber measurements for isotopic sources emitting beta and gamma rays. The work indicates that elimination of the thick dead layer should provide improved performance and improved wav length r ponse characteristic. The preliminary data using secondary-radiation-generating materials indicates that, at least in the case of high-energy radiations, satisfactory Bragg-Gray chambers should be possible using small, spherical detectors. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1962
- Accession Number
- AD0283836
Entities
Organizations
- HRL Laboratories