INDUSTRIAL PREPAREDNESS STUDY FOR DIFFUSED SEMICONDUCTOR DEVICES
Abstract
ONE HUNDRED PREPRODUCTION UNITS OF TRANSISTOR DEVICES 2 (germanium) and 14 (silicon) NP WERE COMPLE D AND TES ING WAS STAR ED. For device 2, leaks in the glass-to-metal seals were encountered and corrected. The base width has been increased slightly to bring the current gain within the proper range at 500 ma collector current. On device 14 NPN, the use of the aluminum base ring was found necessary. The thickness of he dice has been reduced fro 18 mil to 14 mil before etching. Gold pa ting of the emitter lead to the emitter was replaced by a pl i um foil le d compres ion bonded to the emitter. Several changes were made in the size and construction of the silico devices 15 and 16. These changes resulted in a lower ICBO and a smaller unit with its resultant savings in the quantity of silicon required. he storage life est on 500 device 20 units was started. Data on the first 1000 hr of the units stored at 210 C is presented. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1960
- Accession Number
- AD0284071
Entities
People
- M. Hagopian
- Richard J. Hall