DEVELOPMENT OF A LOW NOISE-LOW DISTORTION TRANSISTOR
Abstract
The transistors used are planar passivated epitaxial silicon devices. The processes used are epitaxial deposition techniques, thermal growth of oxides, solid state diffusion, and photo-lithographic masking techniques. Silicon planar epitaxial devices were proposed to meet the noise and distortion requirements. Several types of transistors were investigated for noise and distortion performance. The approach was to attempt to first determine the significant device parameters for low noise and low distortion. The noise at 100 kc was investigated because of the facility of measurement at that frequency. Circuits using a single transistor were also investigated in the 2-32 mc frequency range. The characteristics of the device types investigated are tabulated, and the results of noise and distortion testing not directly related to the test circuit are report . (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 15, 1962
- Accession Number
- AD0284212
Entities
People
- Fred A. Rubi
- John E. Muschinske
Organizations
- Motorola Mobility