A SPIN-ECHO MEMORY FOR A CARRIER TYPE DIGITAL COMPUTER
Abstract
Electron spin-echo was studied as a possible carrier digital computer memory element at microwave frequencies. A general study is made of solid state paramagnetic crystals as possible storage materials. Spin-spin and spin-lattice relaxation times are considered in general, and were measured for calcite, silicon, and other crystals. A study was made of cross-relaxation in calcite using a stimulated spin-echo technique. A decrease in the potential storage time of this crystal by a factor of 8000 is reported due to this relaxation mechanism. Detailed measurements were made on the spinecho signals obtainable at microwave frequencies, and usable amplitude echoes are reported for many crystals and impurity concentrations. A study of noise sources and signal to noise ratios was made. An original system for storing the phase of phase script information pulses was investigated. A complete carrier computer regenerative memory system using two spin-echo devices and a single connecting channel was considered. The storage capacity of the memory device was theoretically determined. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 28, 1961
- Accession Number
- AD0284290
Entities
People
- L.k. Wanlass
Organizations
- University of California, Berkeley