RESEARCH AND DEVELOPMENT FOR SINGLE CRYSTAL GROWTH BY ELECTROCHEMICAL TECHNIQUES
Abstract
The purpose of this work is to investigate techniques of single-crystal growth by electrodeposition. The crystal structure was investigated with etch pit and sensitive X-ray techniques. Divergent beam, Berg-Barrett, and Laue methods were used. New methods were developed for purifying the plating baths and for smoothing the specimen surfaces. It was found that an epitaxial Cu crystal could be produced with a degree of perfection higher than that of the Cu substrate. Where the substrate was highly imperfect, specific imperfections caused polycrystallinity in the electrodeposit. It was shown that an interaction of dislocations and impurities causes the polycrystallinity. An explanation of these facts is proposed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1962
- Accession Number
- AD0284297
Entities
People
- D. Shanefield
- P.e. Lighty
Organizations
- Air Force Cambridge Research Laboratories