MEASUREMENTS OF THERMAL CONDUCTIVITY OF SILICON FROM 680 K TO 1000 K
Abstract
The thermal conductivity of two n-type and one p-type single-crystal silicon samples was measured as a function of temperature from 680 to 1000 K using a series comparative method. The n-type samples had donor concentrations of about 5 x 10 to the 16th power/cc and the p-type sample hadAN ACCEPTOR CONCENTRATION OF ABOUT 10 TO THE 18TH POWER/CC. Two Armco iron standards of approximately the same dimensions as the samples (23mm in diameter and 8mm in thickness) were placed one above and one below the sample. A mixture of sodium silicate and graphite was used to provide low thermal resistance contacts between the sample, the standards, and the sample holder. The thermal conductivity was 0.55 watt/cm C at 680K and 0.30 watt/cm C at 1000K. Between these temperatures the thermal conductivity varied nearly linearly with the reciprocal of the absolute temperature. The charge carrier contribution to the thermal conductivity could not be observed; it was calculated to be 1.8% of the total thermal conductivity. The 1/T dependence of the results indicates that phonon-phonon scattering is dominant in this temperature range. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 15, 1962
- Accession Number
- AD0284751
Entities
People
- Joel J. Martin
- Robert G. Morris
Organizations
- South Dakota School of Mines and Technology