FAILURE MECHANISMS IN SILICON SEMICONDUCTORS

Abstract

GRAIN BOUNDARY DIFFUSION IN SILICON WAS STUDIED. Conductivity measurements of diffused wedgeshaped structures along the boundary give information about the enhancement of the diffusion along the dislocations of the boundary. Investigations of secondary breakdown phenomena in ilicon power transstors were started. It was shown that this failure mechanism is produced by a localization of the current with a drastic temperature increase. These 'hot spots' are observed with temperature - sensitive paint and potential probing techniques. The results are in agreement with the predictions of a two-dimensional theory on lateral thermal instabilities in semiconductor devices. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 09, 1962
Accession Number
AD0285306

Entities

People

  • Hans J. Queisser

Organizations

  • Rome Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boundaries
  • Diffusion
  • Failure Mode And Effect Analysis
  • Grain Boundaries
  • Instability
  • Semiconductor Devices
  • Semiconductors
  • Thermal Instability
  • Two Dimensional

Readers

  • Fluid Mechanics and Fluid Dynamics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics