PRODUCTION ENGINEERING MEASURES. HIGH FREQUENCY TRANSISTOR
Abstract
Effort continued to establish a production design of a 1000 mc germanium transistor. Engineering effort was devoted to developing improvements in epitaxial substrate material, development of techniques to diffuse the epitaxial material, continued development of assembly processes, and development of test fixtures for high frequency measurements. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 20, 1962
- Accession Number
- AD0285422
Entities
People
- T.g. Stoudt