MECHANICAL PROPERTIES OF SILICON CARBIDE SINGLE CRYSTALS

Abstract

Research was conducted to investigate the mechanical properties of vapor phase grown single crystals of silicon carbide. Equipment was designed to deform the crystals in bending by three-point loading. Preliminary results for Young's modulus of elasticity and crossbending strength are reported. Values of strength as high as one million psi were obtained. A correlation was found between sample thickness and strength. The strength at 1750 C considerably exceeds the strength at room temperature. No evidence of gross pl stic deformation under mechanical load was found as high as 1800 C. Some observations were made of dislocation motion during etching at 900 C in borax. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1962
Accession Number
AD0285563

Entities

People

  • D.p.h. Hasselman
  • H.d. Batha

Tags

DTIC Thesaurus Topics

  • Carbides
  • Compound Semiconductors
  • Crystals
  • Elastic Properties
  • Electronic Equipment
  • Flexural Properties
  • Mechanical Properties
  • Modulus Of Elasticity
  • Plastic Properties
  • Silicon
  • Silicon Carbide
  • Single Crystals
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Structural Dynamics.