INTERDIGITATED SILICON TRANSISTOR PROGRAM
Abstract
Work continued on manufacturing techniques and processes for silicon power transistors. A new process for the fabrication of planar structures was developed which yields high voltage breakdowns and l w collector-base reverse leakage currents. A production prototype epitaxial reactor was b ilt. Two-10 and 3-20 transistors were made by a new process in which the base predeposition layer is deposited over the entire wafer and then removed from the desired collector surface prior to the base diffusion. Development of an electrochemical polishing process is in the final stages. Construction of a production prototype epitaxial reactor was completed. A vapor deposition process for the base predeposition operation was established, and the equipment constructed. Crystal mount and lead attachment operations were developed, and the pilot equipment is under construction. A superstructure for base and emitter connections in the 4-50 and 5-100 devices was designed and tested. Voltage breakdown and current leakage tests were made. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1962
- Accession Number
- AD0286307
Entities
People
- B. Rappaport