RESEARCH AND DEVELOPMENT OF SOLID STATE TUNNEL DEVICES AND ARRAYS CAPABLE OF OPERATION AT MICROWATT POWER LEVELS

Abstract

DESCRIPTORS: *Diodes, *Semiconductors, Feasibility studies, Processing, Solid state physics, Electron beams, Voltage, Electric currents, Space charges, T eory, Evaporation, Diffusion, Chemical impurities, Probability, Aluminum, Silicon, Germanium, Gallium com pounds, Arsenides, Resistance, Electrostatic capacitance, Measurement, Alloys. Identifiers: Tunnel diodes.A survey of the present state of the theoretical research on tunnel diodes is presented Experiments aimed at forming extremely small tunnel junctions in silicon are reported. Two approaches are pursued: (1) alloying a relatively large contact area through an extremely shallow n+ layer on a p type base; (2) alloying the relatively large contact areas through small holes in an oxide mask on the silicon. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 02, 1962
Accession Number
AD0286394

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Diodes
  • Electric Current
  • Electron Beams
  • Feasibility Studies
  • Measurement
  • Physics
  • Power Levels
  • Semiconductors
  • Solid State Physics
  • Space Charge
  • Tunnel Diodes

Fields of Study

  • Materials science
  • Physics

Readers

  • Electronics Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Space
  • Space - Hall-Effect Thruster