The Travelling Solvent Method of Crystal Growth.

Abstract

IN AN EFFORT TO ACHIEVE A BETTER UNDERSTANDING OF THE MECHANISM OF THE Travelling Solvent Method and its use for producing p-n junctions, the system Ga-GaAs was investigated further. Work was carried out in the following areas: (1) Ga-GaAs System (p-n junction formation by solvent doping; electrical characterization of p-n junctions; and study of zone movementAS A FUNCTION OF ZONE THICKNESS AND OF A-face/Bface orientation) and (2) S IC (the Cr-SiC system to improve wetting and zone passing; and initial studies of the Si-SiC system using vapordeposited Si). (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 14, 1962
Accession Number
AD0286436

Entities

People

  • A.i. Mlavsky
  • M. Weinstein
  • S.d. Axelrod

Organizations

  • Air Force Cambridge Research Laboratories

Tags

DTIC Thesaurus Topics

  • Crystal Growth
  • Crystals
  • Orientation (Direction)
  • P-N Junctions
  • Thickness

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.