ULTRA-PRESSURE HIGH TEMPERATURE RESEARCH: A FRONTIER IN THE QUEST FOR NEW ELECTRONIC MATERIALS
Abstract
Research devices sustaining pressures of over 1,500,000 psi over 2500 C have been constructed. Diamond has been repeatedly synthesized, its growth mechanism deciphered, a d the synthesis of pure, electronic-grade crystals demonstrated. Cubic boron nitride, a more inert, terrestrially unknown, diamond analogue also has been prepared. Several new crystalline materials, obtained as by-products of the diamond, and boron nitride studies, are described and their significance discussed. The pressure-transmitting solid, pyrophyllite, has b en altered to the minerals kyanite and coesite, a finding of geophysical significance. Pr ssure-d pend nt data are pr sented on gallium arsenide (resistivity) and silver halides (ionic conductivity). The latter, as solid ionic cells, form practical pressure measuring devices. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1962
- Accession Number
- AD0286642
Entities
People
- A.a. Giardini
- J.a. Kohn
Organizations
- Army Research Office