RESEARCH STUDY OF HIGH-POWER HIGH-FREQUENCY SOLID STATE OSCILLATORS
Abstract
Effort was continued to investigate novel silicon devices and their application in high-frequency, high power oscillators. Information is presented on sequential oscillators employing four layer diodes or four layer three-terminal devices. The general theory of such oscillators is presented, and the results on three experimental models are reported. The three-terminal devices achieved a pulse power of 3 kw at 3 mc. On the development of four layer diodes for and circuit experiments with a push-pull oscillator circuit, symmetrical gold doped diodes produced a power output of 2 watts at 5 mc, in agreement with theory. Discussed are three layer avalanche negative resistance diodes for continuous oscillators, and a four layer three-terminal device with interdigitated emitter-base structure. A complete processing schedule is given and circuit performance reported. A single device can produce 100 kw peak pulse power and appears useful in sequential oscillator circuits, or in driving harmonic generators. A theoretical analysis is given of the pulsed-power output of transistors at high frequencies. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1962
- Accession Number
- AD0286798
Entities
People
- R.m. Scarlett