SILICON PLANAR EPITAXIAL TRANSISTOR TYPE 2N2193
Abstract
Contents: Improved KPR resolution Contact evaporation and alloying Collector etching Boron diffusion Phosphorus diffusion Coll ctor contact to the head r Interco ections Reliability measur me t Failure a alysis
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 31, 1962
- Accession Number
- AD0286886
Entities
People
- S.o. Johnson
Organizations
- General Electric