STUDY OF FAILURE MECHANISMS AT SURFACES AND INTERFACES
Abstract
Fabrication of various model system interfaces using thin films of materials differing in chemical and physical properties revealed severa modes of failure. In glass dielectric-metal electrode interfaces, the use of reactive metal electrodes reveals modes of failure characteristic of interfacial polarization phenomena and chemical degradation at the interface. Less reactive metal electrode materials reveal failure modes associated with physical defects in the dielectric. Electrical characteristics of the semiconductor resistance film-substrate interface are functions of the nature of the substrate. Thermal aging characteristics and temperature sensitivity of the conduction mechanism are related, in part, to structural features of the resistance film which are induced by expansion properties and structural aspects of the substrate. Load-life stability and currentnoise indices exhibit relationships to the thermal conductivity and chemical composition of the substrate. The physical dimensions of model are helpful in defining failure mechanism. In general, modes of failure in the dielectric-electrode and resistance film-substrate model systems are enhanced by decreasing the thickness of the thin film materials defining the material interface. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1962
- Accession Number
- AD0287220
Entities
People
- Kenneth Greenough
Organizations
- Motorola Mobility