SILICON GROWN DIFFUSED TRANSISTOR TYPE 2N336.

Abstract

Effort was expended towards improving production techniques on the silicon grown diffused transistor type 2N336, with a maximum failure rate of 0.01% per 1,000 hours at a 90% confidence level at 25 C. as an objective. Two key process teps were singled out to maximize process conrol. The latest processing techniques were incorporated, while minimzing process variability, and at the same time greatly increasing production capabiity. The two specific work items are: (1) Surface Passivation; and (2) High Temperature Main Sealing. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 31, 1962
Accession Number
AD0287436

Entities

Organizations

  • General Electric

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Active Electronic Components
  • Electronic Components
  • Electronic Equipment
  • High Temperature
  • Production
  • Transistors

Fields of Study

  • Materials science

Readers

  • Regression Analysis.
  • Software Engineering
  • Thin Film Deposition Science.