RESEARCH AND DEVELOPMENT ON HIGH CURRENT TUNNEL DIODES
Abstract
Device design of high-current tunnel diodes was performed for germanium, silicon, and gallium arsenide. It is concluded that ilicon is inferior to germanium and gallium arsenide, while the differences between these two are too small to elminate either one at the present time. Germanium tunnel diodes with 300-amp peak currents were fabricated with theoretical efficiencies as an inverter of up to 52%. Gallium arsenide tunnel diodes with more than 200-amp peak currents were made with efficiencies in the 4045% range. A study was made of the diode resistances and it was determined that the resistance near the junction may be a larger factor in the total resistance than the back contact resistance. Two different test circuits were built for measuring high current tunnel diodes. A discussion of some inverter circuit work being performed on another contract is also inclded. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1962
- Accession Number
- AD0287463