EPITAXIAL CONTROL SYSTEM

Abstract

A highly sensitive mass spectrometer was selected for use in a vapor stream analysis system for an epitaxial growth reactor. The instrument will be used to monitor gas phase compositions. PRELIMINARY CALCULATIONS INDICATE THAT IT WILL BE FEASIBLE TO MONITOR GAS PHASE IMPURITIES WHICH will yield epitaxial film resistivities of from .001 to 100 chm-cm, N AND P TYPE IMPURITIES. Silicon compounds will be subject to continuous analysis. Some anticipated problems are the loss of sensitivity due to corrosive nature of gases under investigation, interference from background cases, and unusually low impurity concentrations in the vapor sample.

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Document Details

Document Type
Technical Report
Publication Date
Jun 14, 1962
Accession Number
AD0287466

Entities

People

  • Don M. Jackson Jr.

Organizations

  • Motorola Mobility

Tags

Communities of Interest

  • Advanced Electronics
  • Space

DTIC Thesaurus Topics

  • Air Force
  • Analyzers
  • Contracts
  • Detection
  • Elements
  • Governments
  • Mass Spectrometers
  • Mass Spectrometry
  • Monitors
  • Partial Pressure
  • Sampling
  • Spectra
  • Spectrometers
  • Spectrometry
  • Transition Temperature
  • United States
  • Vacuum

Fields of Study

  • Physics

Readers

  • Combustion science or combustion engineering.
  • Materials Science and Engineering.
  • Systems Analysis and Design