HELICAL INSTABILITIES IN SOLID-STATE PLASMA

Abstract

The background of thermal carriers is included in a theory for helical instabilities in electronhole plasmas. The theory applies to any injection level in intrinsic, n-type, and p-type semiconductors and to insulators. Given the temperature dependence of the mobilities, one can determine the plasma temperature from the electric field at the onset of instability. The n the frequency of the instability can be calculated. A comparison with Ancker-Johnson's experiment in p-InSb shows that the calculated frequencies are within 20% of the experimental values for high magnetic fields, and are a factor circa 2 smaller for low fields. The calculated plasma temperature reaches the optical phonon energy at an electric field of approximately 55 V/CM, AND REMAINS CLOSE TO THIS TEMPERATURE FOR HIGHER FIELDS. The results of numerical calculations for a number of different materials are given. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1962
Accession Number
AD0287753

Entities

People

  • Oivin Holter

Organizations

  • Boeing

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystal Lattice Vibrations
  • Dielectrics
  • Electric Fields
  • Extrinsic Semiconductors
  • Frequency
  • Instability
  • Magnetic Fields
  • Materials
  • P Type Semiconductors
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Plasma Physics / Magnetohydrodynamics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene