EFFECTS OF LONG TERM VACUUM ON COMMERCIAL SILICON RADIATION DETECTORS

Abstract

The data presented in this report are graphical representations describing the effects of long term vacuum (about 10 to the -6th power mm Hg for 6 months) on commercially available silicon radiation detectors of two types: surface barrier, which is manufactured from p-type single crystal silicon. Data include measurements of alpha resolution, dead layer or window thickness, RMS noise voltage, reverse leakage current and pulse height stability at rated voltage. In addition, the report includes a summary of radiation damage on semiconductor materials and devices. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1962
Accession Number
AD0289002

Entities

People

  • E.m. Whatley
  • W.l. Weiss

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystals
  • Detectors
  • Electronics
  • Materials
  • Measurement
  • Radiation
  • Semiconductors
  • Single Crystals
  • Solid State Electronics
  • Thickness

Fields of Study

  • Physics

Readers

  • Business Analytics
  • Marine Hydrodynamics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics