SEMICONDUCTOR DEVICE CONCEPTS

Abstract

Double injection diodes are described which, depending upon the kind of deep level doping impurities empolyed, exhibit instabilities and coherent and/or noisy oscillations in normally positive resistance regions of the v-i characteristics. Similar oscillations in n-type bars of Silicon compensated with certain deep level impurities are also described. The influence of deep levels on these phenomena is discussed. Some preliminary results on experiments with (As sub x P sub 1-x) light emitting junctions are presented. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 31, 1962
Accession Number
AD0289374

Entities

Organizations

  • General Electric

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electronics
  • Impurities
  • Instability
  • Laser Diodes
  • Oscillation
  • Resistance
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics

Readers

  • Electronics Engineering
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics