HIGH VOLTAGE SILICON RECTIFIER STACKS
Abstract
Design testing of the third engineering samples was started. The first unit of the fourth engineering samples was built having an internal expansion chamber, corona endshields and a lesser number of higher voltage rectifier diodes. Thermal measurements confirmed closely the original calculations of temperature rise for the rectifier stack. The reduction in the number of rectifier diodes in the fourth engineering samples reduces the temperature rise appreciably. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1962
- Accession Number
- AD0289378
Entities
People
- Werner Luft