RESEARCH AND DEVELOPMENT-EPITAXIAL OVERGROWTH STRUCTURES IN SILICON

Abstract

Details are provided on the preparation and delivery of wafers for the fabrication of an allepitaxial n-p-n isolation transistor. A total of twelve wafers (six monolayer, four two-layer, and two three-layer structures) were delivered. Background information is given about the epitaxial growth systems and techniques used; the bases for choice of specific approaches and processes are indicated. The methods of evaluating the epitaxial structures produced are described and evaluation results given for some specific wafer structures. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 14, 1962
Accession Number
AD0289504

Entities

People

  • D.m. Schmechel
  • Z. Khatchadourian

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Epitaxial Growth
  • Fabrication
  • Monomolecular Films
  • Test And Evaluation
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Software Engineering