THE MECHANISM OF OXIDE FORMATION IN THE INITIAL STAGES OF OXIDATION
Abstract
Work comprised field emission experiments in which O at pressures between 10 to the -10th and 10 to the -4th power mm Hg was reacted with clean W and Ta substrates at temperatures between 25 and 2000C. The random nucleation of a distinct second phase was observed on tantalum at 830 and 1135C. Marked differences between the course of reaction of O on W and of O on Ta are becoming apparent. Considerable difficulty was encountered in developing a reproducible technique for the cleaning of Ta emitter-substrates. The most recent method developed, however, did produce a clean tantalum emission pattern very readily without the use of field evaporation. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 14, 1962
- Accession Number
- AD0290258
Entities
People
- D.w. Rausch
- K.l. Moazed
- M.g. Fontana
Organizations
- Ohio State University