ELECTRONICS PROGRAM. ELECTRONIC PROPERTIES OF THIN FILMS

Abstract

Research experiments into methods of forming structures suitable for the observation of tunneling phenomena are presented. Metallic films of tin, indium, aluminum, gold, permalloy, lead, and silicon monoxide were successfully deposited for several experiments. Dielectric films of aluminum oxide and barium stearate were successfully fabricated. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1962
Accession Number
AD0290950

Entities

People

  • F. Jr. Vernon

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum
  • Aluminum Oxides
  • Chemical Compounds
  • Dielectric Films
  • Electronics
  • Films
  • Monoxides
  • Observation
  • Oxides
  • Quantum Tunneling
  • Stearates
  • Thin Films
  • Tunneling

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Nanofabrication and Microfabrication.
  • Spectroscopy.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene