LOW WORK FUNCTION SEMICONDUCTOR COLLECTORS

Abstract

Cesium-antimony and, in one case, cesium-tellurium compounds as film coatings on nickel substrates were investigated for possible collectors in thermionic energy converters. The reactant metal was deposited on the substrate and later reacted with cesium. No difference was detectedAMONG ANTIMONY FILMS EVAPORATED IN THE EXPERIMENTAL TUBE, EVAPORATED BEFORE ASSEMBLY, AND ELECTROPLATED. Film thicknesses were in the range 1000 - 10,000 A. Two types of metal-glass experimental devices were utilized. In most cases, the thermionic work function was measured by contact potential difference with an electronemitting refractory metal. Cesium reservoir temperatures were used from 75 to 125 C. The collector temperature in most cases was not more than 15 C higher than the cesium reservoir temperature, but in one device was roughly 100 C higher. It was found: (1) the thermionic work function of the cesium-antimony coated nickel collector was in some experiments 1.3 ! 0.1 eV; (2) the thermionic work function of the cesiumtellurium coated nickel collector was consistently 1.2 ! 0.1 eV in the one experiment run with this collector; (3) more control must be obtained over film thickness and chemical purity to determine the cause of the variation in observed thermionic work function. (Author)

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1962
Accession Number
AD0290955

Entities

People

  • H.w. Hemstreet
  • R.a. Chapman

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Accumulators
  • Antimony
  • Metalloid Alloys
  • Metals
  • Refractory Metals
  • Reservoirs
  • Semiconductors
  • Substrates
  • Tellurium
  • Tellurium Compounds
  • Thickness
  • Work Functions

Readers

  • Electronics Engineering
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene