SEMICONDUCTOR RESEARCH
Abstract
IN THE STUDY OF HOT CARRIER PHENOMENA, THE METHOD OF DETERMINING CARRIER DISTRIBUTION IN P-TYPE Ge by using the change of IR absorption under applied electric field appears to have been brought to a successful stage. Galvanomagnetic studies on p-type Ge, InSb, and GaSb yielded interesting results on the magneto-resistance, anisotropy, saturation with magnetic field, etc., adding to the information on the valence band. Preliminary measurements of the piezoresistance of n-type GaAs were made with the aim of determining the structure of the conduction band. In the work on the optical properties of GaSb, exciton absorption and absorption of excitonimpurity complexes were observed and studied with polarized light and with applied magnetic field. Radiation damage in silicon was investigated by studing the microwave paramagnetic resonance and the infrared absorption. Specific heat was studied on indium alloys and lead with empahsis on the superconducting state. The electronic states of the shallow acceptor impurities in Ge were calculated theoretically to improve the previous calculations. Single crystals of Ge, InSb, and GaSb semiconductors were prepared. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1962
- Accession Number
- AD0291561
Entities
Organizations
- Purdue Research Foundation