RADIATION EFFECTS ON SEMICONDUCTOR CATALYSTS

Abstract

The effect of ion bombardment on carrier lifetime, photoconductivity, and surface tructure of germanium (111) crystals was investigated after bombardment at voltages between 10 and 2000 v. I T WAS FOUND THAT THE LIFETIME DECREASED SIGNIFICANTLY AT BOMBAR ING VOLTAGES ABOVE *) V AND THAT THE NUMBER OF DEFECTS IN THE SURFACE REGION INCREASED SIMULTANEOUSLY BY SEVERAL ORDERS OF MAGNITUDES. These efects are most likely dislocations and vacancy clusters. Less table defects were introduced at very low bombarding voltages but these too were found to affect the electrical properties of the bombarded s rfaces appreciably. preliminary results of the effect of adsorbed gases on the properties of ion bom arded surfaces and the effect of neutr n bombardment on the catalytic exchange of ydrogen with deuterium on etc ed surfaces are included. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1962
Accession Number
AD0291844

Entities

People

  • H.c. Sosnovosky

Tags

DTIC Thesaurus Topics

  • Catalysts
  • Compound Semiconductors
  • Deuterium
  • Dislocations
  • Electrical Properties
  • Electricity
  • Electromagnetic Fields
  • Electromagnetic Radiation
  • Electronics
  • Germanium
  • Ion Bombardment
  • Photoconductivity
  • Radiation
  • Radiation Effects
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Physics

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics